SUP75N08-10-E3 Vishay/Siliconix, SUP75N08-10-E3 Datasheet - Page 5

• Manufacturer Part Number: SUP75N08-10-E3
• Description: MOSFET 75V 75A 187W
• Manufacturer: Vishay/Siliconix

Specifications of SUP75N08-10-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 10 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 187 W
• Rise Time: 95 ns
• Factory Pack Quantity: 500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 65 ns

Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
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