SUP75N08 VISHAY [Vishay Siliconix], SUP75N08 Datasheet

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SUP75N08

Manufacturer Part Number
SUP75N08
Description
N-Channel 75-V (D-S), 175C MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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SUP75N08
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SUP75N08
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Part Number:
SUP75N08-09L
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VISHAY
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SUP75N08-10
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SUP75N08-10-E3
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ON
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SUP75N08-10-E3
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Part Number:
SUP75N08-10-E3
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70 000
Notes
a.
b.
c.
d.
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
V
Package limited.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
75
75
SUP75N08-09L
TO-220AB
(V)
Top View
G D S
1%.
J
J
b
b
b
= 175 C)
= 175 C)
DRAIN connected to TAB
N-Channel 75-V (D-S), 175 C MOSFET
0.011 @ V
0.009 @ V
Parameter
Parameter
r
DS(on)
GS
GS
T
( )
= 4.5 V
C
= 10 V
= 25 C (TO-220AB and TO-263)
PCB Mount (TO-263)
T
Free Air (TO-220AB)
A
= 25 C (TO-263)
T
L = 0.1 mH
T
C
C
= 125 C
= 25 C
New Product
SUB75N08-09L
I
D
d
d
G
Top View
TO-263
75
75
(A)
a
a
D
S
Symbol
Symbol
T
R
R
R
J
V
V
E
I
I
P
P
, T
I
I
DM
AR
thJA
thJA
thJC
GS
DS
D
D
AR
D
D
stg
SUP/SUB75N08-09L
G
www.vishay.com FaxBack 408-970-5600
–55 to 175
N-Channel MOSFET
Limit
Limit
250
62.5
280
3.7
0.6
75
40
75
240
20
66
75
Vishay Siliconix
c
a
D
S
Unit
Unit
mJ
C/W
C/W
W
W
V
A
A
A
C
2-1

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SUP75N08 Summary of contents

Page 1

... DS(on) 0.009 @ 0.011 @ TO-220AB DRAIN connected to TAB Top View SUP75N08-09L Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175 C) = 175 Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy (TO-220AB and TO-263) ...

Page 2

SUP/SUB75N08-09L Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State ...

Page 3

Output Characteristics 250 200 150 100 – Drain-to-Source Voltage (V) DS Transconductance 200 160 120 ...

Page 4

SUP/SUB75N08-09L Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Avalanche Current vs. ...

Page 5

Maximum Drain Current vs. Case Temperature 100 125 T – Ambient Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...

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