SUP75N08-10-E3 Vishay/Siliconix, SUP75N08-10-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP75N08-10-E3
• Description: MOSFET 75V 75A 187W
• Manufacturer: Vishay/Siliconix

Specifications of SUP75N08-10-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 10 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 187 W
• Rise Time: 95 ns
• Factory Pack Quantity: 500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 65 ns

SUP/SUB75N08-10
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
0.01
0.1
100
2.5
2.0
1.5
1.0
0.5
80
60
40
20
2
1
0
0
–50
0
10
0.02
–5
0.05
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
0.2
0.1
V
I
–25
D
GS
= 30 A
25
= 10 V
T
0
J
T
vs. Case Temperature
50
C
– Junction Temperature ( C)
Single Pulse
– Case Temperature ( C)
25
75
50
10
–4
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
10
–3
Square Wave Pulse Duration (sec)
175
175
10
500
100
0.1
10
–2
1
0.1
100
10
1
Limited
by r
DS(on)
Source-Drain Diode Forward Voltage
V
DS
T
Single Pulse
V
0.3
C
– Drain-to-Source Voltage (V)
Safe Operating Area
T
SD
J
= 25 C
1
10
= 150 C
– Source-to-Drain Voltage (V)
–1
0.6
10
0.9
T
S-57253—Rev. B, 24-Feb-98
J
Document Number: 70263
= 25 C
1
1.2
100
10 s
100 s
1 ms
10 ms
100 ms
dc
3
1.5