SUP75N08-09L-E3 Vishay/Siliconix, SUP75N08-09L-E3 Datasheet

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SUP75N08-09L-E3

Manufacturer Part Number
SUP75N08-09L-E3
Description
MOSFET 75V 75A 250W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SUP75N08-09L-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Resistance Drain-source Rds (on)
9 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB-3
Fall Time
22 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
250 W
Rise Time
10 ns
Factory Pack Quantity
100
Tradename
TrenchFET
Typical Turn-off Delay Time
107 ns
Notes
a.
b.
c.
d.
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
V
Package limited.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
75
75
SUP75N08-09L
TO-220AB
(V)
Top View
G D S
1%.
J
J
b
b
b
= 175 C)
= 175 C)
DRAIN connected to TAB
N-Channel 75-V (D-S), 175 C MOSFET
0.011 @ V
0.009 @ V
Parameter
Parameter
r
DS(on)
GS
GS
T
( )
= 4.5 V
C
= 10 V
= 25 C (TO-220AB and TO-263)
PCB Mount (TO-263)
T
Free Air (TO-220AB)
A
= 25 C (TO-263)
T
L = 0.1 mH
T
C
C
= 125 C
= 25 C
New Product
SUB75N08-09L
I
D
d
d
G
Top View
TO-263
75
75
(A)
a
a
D
S
Symbol
Symbol
T
R
R
R
J
V
V
E
I
I
P
P
, T
I
I
DM
AR
thJA
thJA
thJC
GS
DS
D
D
AR
D
D
stg
SUP/SUB75N08-09L
G
www.vishay.com FaxBack 408-970-5600
–55 to 175
N-Channel MOSFET
Limit
Limit
250
62.5
280
3.7
0.6
75
40
75
240
20
66
75
Vishay Siliconix
c
a
D
S
Unit
Unit
mJ
C/W
C/W
W
W
V
A
A
A
C
2-1

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SUP75N08-09L-E3 Summary of contents

Page 1

... DS(on) 0.009 @ 0.011 @ TO-220AB DRAIN connected to TAB Top View SUP75N08-09L Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175 C) = 175 Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy (TO-220AB and TO-263) ...

Page 2

SUP/SUB75N08-09L Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State ...

Page 3

Output Characteristics 250 200 150 100 – Drain-to-Source Voltage (V) DS Transconductance 200 160 120 ...

Page 4

SUP/SUB75N08-09L Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Avalanche Current vs. ...

Page 5

Maximum Drain Current vs. Case Temperature 100 125 T – Ambient Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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