SUP75N08-10-E3 Vishay/Siliconix, SUP75N08-10-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP75N08-10-E3
• Description: MOSFET 75V 75A 187W
• Manufacturer: Vishay/Siliconix

Specifications of SUP75N08-10-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 10 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 187 W
• Rise Time: 95 ns
• Factory Pack Quantity: 500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 65 ns

Document Number: 70263
S-57253—Rev. B, 24-Feb-98
7000
6000
5000
4000
3000
2000
1000
250
200
150
100
120
100
50
80
60
40
20
0
0
0
0
0
0
C
V
GS
rss
10
= 10 V
20
V
V
2
V
DS
DS
GS
Output Characteristics
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
T
– Gate-to-Source Voltage (V)
Transconductance
C
20
= –55 C
Capacitance
40
4
8 V
4 V
C
30
oss
9 V
60
6
40
C
80
7 V
6 V
5 V
8
iss
25 C
50
125 C
100
10
60
0.012
0.010
0.008
0.006
0.004
0.002
200
150
100
50
20
16
12
0
0
8
4
0
0
0
0
V
I
D
DS
= 75 A
25
On-Resistance vs. Drain Current
= 30 V
V
20
V
GS
GS
Transfer Characteristics
Q
2
= 10 V
50
g
– Gate-to-Source Voltage (V)
SUP/SUB75N08-10
I
D
– Total Gate Charge (nC)
www.vishay.com FaxBack 408-970-5600
– Drain Current (A)
Gate Charge
25 C
T
40
C
75
= 125 C
V
GS
Vishay Siliconix
4
= 20 V
100
60
125
6
–55 C
80
150
100
175
8
2-3