BUK9628-100A /T3 NXP Semiconductors, BUK9628-100A /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK9628-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9628-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 49 A
• Resistance Drain-source Rds (on): 0.027 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 166 W
• Rise Time: 58 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 250 ns
• Part # Aliases: BUK9628-100A,118

NXP Semiconductors
BUK9628-100A
Product data sheet
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(pF)
C
8
6
4
2
0
10
as a function of drain-source voltage; typical
values
V
V
-2
C
C
C
GS
GS
iss
oss
rss
= 0 V; f = 1 MHz
= 0 V
10
-1
1
(A)
I
F
100
80
60
40
20
10
0
0
All information provided in this document is subject to legal disclaimers.
V
003aaf232
DS
0.2
(V)
10
Rev. 02 — 26 April 2011
2
0.4
T
j
= 175 °C
0.6
Fig 16. Gate-source voltage as a function of gate
0.8
V
(V)
GS
1.0
T
5
4
3
2
1
0
j
= 25 °C
charge; typical values
T
0
j
= 25 °C; I
003aaf234
1.2
V
SDS
N-channel TrenchMOS logic level FET
(V)
1.4
D
20
= 25 A
V
DS
BUK9628-100A
= 14 V
40
V
DS
= 44 V
Q
© NXP B.V. 2011. All rights reserved.
G
003aaf233
(nC)
60
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