BUK9628-100A /T3 NXP Semiconductors, BUK9628-100A /T3 Datasheet - Page 3

• Manufacturer Part Number: BUK9628-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9628-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 49 A
• Resistance Drain-source Rds (on): 0.027 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 166 W
• Rise Time: 58 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 250 ns
• Part # Aliases: BUK9628-100A,118

NXP Semiconductors
BUK9628-100A
Product data sheet
Fig 1.
Fig 3.
P
(%)
I
(A)
DM
der
100
10
10
80
60
40
20
10
0
1
3
2
function of mounting base temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
R
mb
DS(on)
= 25 °C; I
40
= V
DS
/ I
D.C.
10
DM
D
80
is single pulse
120
10
10 μs
100 μs
10 ms
100 ms
2
t
1 ms
p
= 1 μs
V
160
All information provided in this document is subject to legal disclaimers.
DS
T
003aaf220
003aaf222
mb
(V)
(°C)
200
10
Rev. 02 — 26 April 2011
3
Fig 2.
Fig 4.
WDSS
(%)
(%)
I
D
100
120
100
80
60
40
20
80
60
40
20
0
0
function of mounting base temperature
20
avalanche energy as a function of
mounting-base temperature
V
Normalized continuous drain current as a
Normalised drain-source non-repetitive
0
GS
≥ 5 V
N-channel TrenchMOS logic level FET
40
60
80
BUK9628-100A
100
120
140
160
© NXP B.V. 2011. All rights reserved.
T
T
mb
003aaf221
003aaf235
mb
(°C)
(°C)
200
180
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