BUK9628-100A /T3 NXP Semiconductors, BUK9628-100A /T3 Datasheet
BUK9628-100A /T3
Specifications of BUK9628-100A /T3
Related parts for BUK9628-100A /T3
BUK9628-100A /T3 Summary of contents
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... BUK9628-100A N-channel TrenchMOS logic level FET Rev. 02 — 26 April 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... °C mb ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET Graphic symbol mbb076 3 Version SOT404 Min Max - 100 - ...
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... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET 100 I D (%) 120 ≥ ...
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... P − −3 10 −6 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET 003aaf236 25 ° (ms) AV Min Typ - - - 50 003aaf223 t p δ − ...
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... ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET Min Typ Max 100 - - 1 ...
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... V (V) DS Fig 8. 003aaf226 (V) GS Fig 10. Transfer characteristics: drain current as a All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET °C j Drain-source on-state resistance as a function of drain current ...
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... I (A) D Fig 12. Normalized drain-source on-state resistance 003aaf230 100 200 T (°C) j Fig 14. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET 3.0 a 2.5 2.0 1.5 1.0 0.5 -100 0 100 ...
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... Fig 16. Gate-source voltage as a function of gate 100 175 ° 0.2 0.4 0.6 0.8 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET ° charge ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK9628-100A separated from data sheet BUK9528_9628-100A v.1. Product specification All information provided in this document is subject to legal disclaimers. ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK9628-100A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2011 Document identifier: BUK9628-100A ...