BUK9628-100A /T3 NXP Semiconductors, BUK9628-100A /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK9628-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9628-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 49 A
• Resistance Drain-source Rds (on): 0.027 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 166 W
• Rise Time: 58 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 250 ns
• Part # Aliases: BUK9628-100A,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9628-100A
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
unclamped inductive load
Single-shot avalanche rating; avalanche current as a function of avalanche period
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Z
(K/W)
th(j-mb)
I
(A)
AS
10
10
10
10
10
−1
−2
−3
1
2
10
10
1
−6
-3
All information provided in this document is subject to legal disclaimers.
δ = 0.5
T
j
prior to avalanche150 °C
0.05
0.02
0.2
0.1
10
0
−5
10
Rev. 02 — 26 April 2011
10
-2
−4
Conditions
minimum footprint ; FR4 board
10
−3
10
-1
10
−2
P
10
25 °C
t
p
−1
1
T
t
AV
003aaf236
003aaf223
1
δ =
(ms)
t
p
N-channel TrenchMOS logic level FET
(s)
T
t
t
p
10
10
BUK9628-100A
Min
-
-
Typ
-
50
© NXP B.V. 2011. All rights reserved.
-
Max
0.9
Unit
K/W
K/W
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