BUK9628-100A /T3 NXP Semiconductors, BUK9628-100A /T3 Datasheet - Page 6

• Manufacturer Part Number: BUK9628-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9628-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 49 A
• Resistance Drain-source Rds (on): 0.027 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 166 W
• Rise Time: 58 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 250 ns
• Part # Aliases: BUK9628-100A,118

NXP Semiconductors
BUK9628-100A
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
DS(on)
(A)
I
D
60
40
20
23
21
19
17
15
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
3
j
j
= 25 °C
= 25 °C; I
V
GS
(V) = 10.0
2
5
D
5.0
4.0
3.8
= 25 A
4
7
6
9
All information provided in this document is subject to legal disclaimers.
8
V
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
003aaf224
V
003aaf226
GS
DS
(V)
(V)
10
11
Rev. 02 — 26 April 2011
Fig 8.
Fig 10. Transfer characteristics: drain current as a
R
(mΩ)
DS(on)
(A)
I
D
65
55
45
35
25
25
20
15
10
5
0
of drain current; typical values
function of gate-source voltage; typical values
T
Drain-source on-state resistance as a function
V
5
0
j
DS
= 25 °C
> I
N-channel TrenchMOS logic level FET
D
x R
DSon
25
2
BUK9628-100A
T
j
= 175 °C
45
4
3.0
3.2
3.4
5.0
V
© NXP B.V. 2011. All rights reserved.
T
I
GS
D
j
= 25 °C
003aaf225
003aaf227
(A)
(V)
3.6
3.8
4.0
65
6
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