FDMC6675BZ_F125 Fairchild Semiconductor, FDMC6675BZ_F125 Datasheet - Page 4

• Manufacturer Part Number: FDMC6675BZ_F125
• Description: MOSFET -30V P-CH PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC6675BZ_F125

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 9.5 A
• Resistance Drain-source Rds (on): 14.4 mOhms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 36 W

©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D3
Typical Characteristics
0.01
0.1
10
70
10
50
10
Figure 7.
0.001
8
6
4
2
0
1
1
0.01
0
Figure 11.
Figure 9. Unclamped Inductive
I
D
= -9.5 A
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
T
JA
= MAX RATED
= 25
Switching Capability
0.01
-V
10
= 125
Gate Charge Characteristics
DS
t
0.1
o
AV
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
C
, TIME IN AVALANCHE (ms)
T
o
Forward Bias Safe
C/W
J
Q
DS(on)
= 125
g
, GATE CHARGE (nC)
V
0.1
20
DD
o
= -10 V
C
T
J
1
= 25
T
V
30
DD
J
1
o
C
= 25 °C unless otherwise noted
= -20 V
T
J
V
= 100
10
DD
40
10
= -15 V
o
C
100 ms
10 ms
10 s
1 ms
DC
1 s
100
100
50
4
10
10
10
10
10
10
5000
1000
50
40
30
20
10
Figure 10.
100
25
0
-4
-5
-6
-7
-8
-9
0
0.1
Figure 8.
Current vs Case Temperature
V
R
f = 1 MHz
V
GS
T
GS
V
JC
= 0V
GS
50
= 0 V
= 3.4
5
Figure 12. I
-V
= -4.5 V
-V
Maximum Continuous Drain
DS
to Source Voltage
GS ,
T
Limited by Package
o
, DRAIN TO SOURCE VOLTAGE (V)
C/W
C
T
Capacitance vs Drain
GATE TO SOURCE VOLTAGE(V)
,
J
CASE TEMPERATURE
= 150
10
75
V
GS
o
1
C
= -10 V
gss
15
vs V
100
T
J
= 25
gss
20
o
C
(
o
C
125
)
www.fairchildsemi.com
10
25
C
C
C
rss
iss
oss
150
30
30