BUK9880-55A T/R NXP Semiconductors, BUK9880-55A T/R Datasheet - Page 8

• Manufacturer Part Number: BUK9880-55A T/R
• Description: MOSFET TAPE-7 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9880-55A T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 0.073 Ohms
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Fall Time: 32 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 8 W
• Rise Time: 118 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 20 ns
• Part # Aliases: BUK9880-55A,115

NXP Semiconductors
BUK9880-55A_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of
(A)
I
(A)
D
I
S
15
10
60
40
20
5
0
0
V
function of gate-source voltage; typical values
V
source-drain (diode forward) voltage; typical
values
0.0
0
DS
GS
= 25 V
= 0 V
T
j
0.5
= 150 C
1
T
j
= 150 C
1.0
2
T
j
= 25 C
T
j
= 25 C
1.5
3
V
V
GS
SD
03nc49
03nc46
(V)
(V)
2.0
4
Rev. 02 — 12 April 2007
Fig 14. Gate-source voltage as a function of gate
Fig 16. Single-pulse and repetitive avalanche rating;
(A)
I
AL
(1) Single-pulse; T
(2) Single-pulse; T
(3) Repetitive.
V
(V)
10
10
GS
10
-1
-2
1
5
4
3
2
1
0
10
T
charge; typical values
See
avalanche current as a function of avalanche
time
0
j
-3
= 25 C; I
Table note 1
V
N-channel TrenchMOS logic level FET
DS
10
= 14 V
D
-2
= 10 A
j
j
= 25 C.
= 125 C.
5
of
Table 3 “Limiting
BUK9880-55A
10
-1
V
DS
= 44 V
10
(3)
1
© NXP B.V. 2007. All rights reserved.
Q
(2)
values”.
G
t
003aab771
AL
(nC)
03nc47
(ms)
(1)
15
10
8 of 12