BUK9880-55A T/R NXP Semiconductors, BUK9880-55A T/R Datasheet - Page 3

• Manufacturer Part Number: BUK9880-55A T/R
• Description: MOSFET TAPE-7 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9880-55A T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 0.073 Ohms
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Fall Time: 32 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 8 W
• Rise Time: 118 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 20 ns
• Part # Aliases: BUK9880-55A,115

NXP Semiconductors
BUK9880-55A_2
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
I
(A)
P
10
10
(%)
D
120
10
10
der
10
80
40
-1
-2
0
3
2
1
10
function of solder point temperature
T
P
0
sp
der
-1
= 25 C; I
P
=
----------------------- -
P
t
p
tot 25 C
50
P
T
DM
tot
is single pulse.
=
T
t
p
t
100 %
100
150
T
03aa17
sp
1
( C)
R
DSon
200
Rev. 02 — 12 April 2007
= V
DS
/ I
D
Fig 2. Continuous drain current as a function of
DC
(A)
I
D
8
6
4
2
0
V
solder point temperature
0
GS
5 V
10
N-channel TrenchMOS logic level FET
50
BUK9880-55A
100
V
DS
(V)
150
© NXP B.V. 2007. All rights reserved.
t
p
T
003aab787
100 s
1 ms
10 ms
100 ms
= 10 s
sp
03nc54
( C)
10
200
2
3 of 12