BUK9880-55A T/R NXP Semiconductors, BUK9880-55A T/R Datasheet - Page 2

• Manufacturer Part Number: BUK9880-55A T/R
• Description: MOSFET TAPE-7 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9880-55A T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 0.073 Ohms
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Fall Time: 32 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 8 W
• Rise Time: 118 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 20 ns
• Part # Aliases: BUK9880-55A,115

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK9880-55A_2
Product data sheet
Type number
BUK9880-55A
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
DR
DRM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Conditions:
a) Maximum value not quoted. Repetitive rating defined in
b) Single-pulse avalanche rating limited by T
c) Repetitive avalanche rating limited by an average junction temperature of 145 C.
d) Refer to application note AN10273 for further information.
Parameter
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current
peak reverse drain current
non-repetitive drain-source avalanche
energy
repetitive drain-source avalanche
energy
Ordering information
Limiting values
Package
Name
SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
j(max)
of 150 C.
Conditions
R
T
T
T
T
T
T
unclamped inductive load; I
R
Rev. 02 — 12 April 2007
sp
sp
sp
sp
sp
sp
GS
GS
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
= 20 k
= 50 ; V
Figure
16.
GS
GS
GS
Figure 1
= 5 V; see
= 5 V; starting at T
= 5 V; see
p
p
10 s; see
10 s
D
Figure 2
N-channel TrenchMOS logic level FET
= 6 A; V
Figure 2
Figure 3
j
and
DS
= 25 C
BUK9880-55A
3
55 V;
[1]
© NXP B.V. 2007. All rights reserved.
Min Max
-
-
-
-
-
-
-
-
-
-
-
55 +150
55 +150
55
55
7
4
30
8
7
30
36
-
15
Version
SOT223
2 of 12
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C