BUK9880-55A T/R NXP Semiconductors, BUK9880-55A T/R Datasheet - Page 4

• Manufacturer Part Number: BUK9880-55A T/R
• Description: MOSFET TAPE-7 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9880-55A T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 0.073 Ohms
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Fall Time: 32 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 8 W
• Rise Time: 118 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 20 ns
• Part # Aliases: BUK9880-55A,115

NXP Semiconductors
5. Thermal characteristics
Table 4.
BUK9880-55A_2
Product data sheet
Symbol
R
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
th(j-a)
th(j-sp)
Z
(K/W)
10
10
10
th(j-sp)
10
-1
-2
2
1
10
-6
0.02
0.05
Thermal characteristics
0.2
0.1
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to solder point
= 0.5
Single Shot
10
-5
10
-4
10
-3
Rev. 02 — 12 April 2007
10
-2
Conditions
10
-1
N-channel TrenchMOS logic level FET
1
BUK9880-55A
P
Min
-
-
10
t
p
T
Typ
70
-
© NXP B.V. 2007. All rights reserved.
t
p
(s)
03nc55
=
T
t
p
t
Max
-
15
10
2
4 of 12
Unit
K/W
K/W