BUK9880-55A T/R NXP Semiconductors, BUK9880-55A T/R Datasheet

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BUK9880-55A T/R

Manufacturer Part Number
BUK9880-55A T/R
Description
MOSFET TAPE-7 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9880-55A T/R

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
7 A
Resistance Drain-source Rds (on)
0.073 Ohms
Configuration
Single Dual Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Fall Time
32 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
8 W
Rise Time
118 ns
Factory Pack Quantity
1000
Typical Turn-off Delay Time
20 ns
Part # Aliases
BUK9880-55A,115
1. Product profile
2. Pinning information
Table 1.
Pin
1
2
3
4
Description
gate (G)
drain (D)
source (S)
solder point; connected to drain (D)
Pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP General Purpose Automotive (GPA) TrenchMOS technology.
I
I
I
I
I
I
BUK9880-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 12 April 2007
Very low on-state resistance
150 C rated
Automotive systems
Motors, lamps and solenoids
E
I
D
DS(AL)S
7 A
36 mJ
Simplified outline
SOT223 (SC-73)
1
2
4
I
I
I
I
I
I
3
Q101 compliant
Logic level compatible
General purpose power switching
12 V and 24 V loads
R
P
tot
DSon
8 W
= 68 m (typ)
Symbol
Product data sheet
mbb076
G
D
S

Related parts for BUK9880-55A T/R

BUK9880-55A T/R Summary of contents

Page 1

... BUK9880-55A N-channel TrenchMOS logic level FET Rev. 02 — 12 April 2007 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 150 C rated 1.3 Applications ...

Page 2

... pulsed unclamped inductive load starting Figure 16. of 150 C. j(max) Rev. 02 — 12 April 2007 BUK9880-55A N-channel TrenchMOS logic level FET Figure 2 and 3 Figure see Figure [1] © ...

Page 3

... Fig 2. Continuous drain current as a function of solder point temperature DSon Rev. 02 — 12 April 2007 BUK9880-55A N-channel TrenchMOS logic level FET 003aab787 50 100 150 03nc54 100 100 ms 10 ...

Page 4

... Single Shot - Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration BUK9880-55A_2 Product data sheet Conditions - Rev. 02 — 12 April 2007 BUK9880-55A N-channel TrenchMOS logic level FET Min Typ - (s) p © ...

Page 5

... Figure 1 see Figure /dt = 100 Rev. 02 — 12 April 2007 BUK9880-55A N-channel TrenchMOS logic level FET Min Typ Max and 10 1 1 2 500 ...

Page 6

... V (V) DS Fig 6. Drain-source on-state resistance as a function 03nc52 V ( (A) D Fig 8. Normalized drain-source on-state resistance Rev. 02 — 12 April 2007 BUK9880-55A N-channel TrenchMOS logic level FET 80 DSon gate-source voltage; typical values ...

Page 7

... I ( Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 12 April 2007 BUK9880-55A N-channel TrenchMOS logic level FET 03aa36 min typ max ( iss ...

Page 8

... GS Fig 14. Gate-source voltage as a function of gate 03nc46 1.5 2.0 V (V) SD (1) Single-pulse; T (2) Single-pulse; T (3) Repetitive. Fig 16. Single-pulse and repetitive avalanche rating; Rev. 02 — 12 April 2007 BUK9880-55A N-channel TrenchMOS logic level FET ...

Page 9

... scale 0.32 6.7 3.7 7.3 4.6 2.3 0.22 6.3 3.3 6.7 REFERENCES JEDEC JEITA SC-73 Rev. 02 — 12 April 2007 BUK9880-55A N-channel TrenchMOS logic level FET detail 1.1 0.95 0.2 0.1 0.1 0.7 0.85 EUROPEAN PROJECTION SOT223 ISSUE DATE 04-11-10 06-03-16 © NXP B.V. 2007. All rights reserved. ...

Page 10

... Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - values”: corrected V value from Product specification - Rev. 02 — 12 April 2007 BUK9880-55A Supersedes BUK9880_55A-01 - © NXP B.V. 2007. All rights reserved ...

Page 11

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 12 April 2007 BUK9880-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2007. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 April 2007 Document identifier: BUK9880-55A_2 ...

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