FDMC6675BZ_F127 Fairchild Semiconductor, FDMC6675BZ_F127 Datasheet

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FDMC6675BZ_F127

Manufacturer Part Number
FDMC6675BZ_F127
Description
MOSFET -30V P-CH PwrTrench
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMC6675BZ_F127

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
- 9.5 A
Resistance Drain-source Rds (on)
14.4 mOhms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MLP 3.3 x 3.3
Minimum Operating Temperature
- 55 C
Power Dissipation
36 W
©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D3
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC6675BZ
P-Channel Power Trench
-30 V, -20 A, 14.4 m:
Features
„ Max r
„ Max r
„ HBM ESD protection level of 8 kV typical(note 3)
„ Extended V
„ High performance trench technology for extremely low r
„ High power and current handling capability
„ Termination is Lead-free and RoHS Compliant
V
V
I
P
T
R
R
D
J
DS
GS
D
TJC
TJA
, T
Symbol
Device Marking
STG
FDMC6675BZ
DS(on)
DS(on)
GSS
= 14.4 m: at V
= 27.0 m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
range (-25 V) for battery applications
Top
GS
GS
MLP 3.3x3.3
FDMC6675BZ
-Continuous
= -10 V, I
= -4.5 V, I
-Continuous (Silicon limited)
-Pulsed
Device
D
D
Pin 1
= -9.5 A
= -6.9 A
T
A
®
= 25 °C unless otherwise noted
MOSFET
Parameter
S
S
S
MLP 3.3X3.3
DS(on)
G
Package
Bottom
1
T
T
T
T
T
General Description
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
Application
„ Load Switch in Notebook and Server
„ Notebook Battery Pack Power Management
C
C
A
C
A
D
DS(on)
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
D
D
D
and ESD protection.
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
8
6
7
5
Tape Width
12 mm
-55 to +150
Ratings
±25
-9.5
-30
-20
-40
-32
3.4
2.3
36
53
September 2010
www.fairchildsemi.com
3000 units
Quantity
4
3
1
2
G
Units
S
S
S
°C/W
°C
W
V
V
A

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FDMC6675BZ_F127 Summary of contents

Page 1

... TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device FDMC6675BZ FDMC6675BZ ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D3 ® MOSFET General Description = -9.5 A The FDMC6675BZ has been designed to minimize losses in D load switch applications. Advancements in both silicon and = -6 ...

Page 2

... TJA the user's board design. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2 The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev. °C unless otherwise noted ...

Page 3

... Figure 3. Normalized On Resistance vs Junction Temperature 32 P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev. °C unless otherwise noted J 5.0 4.5 4.0 3.5 3.0 2 -3.5 V 2 1.0 0.5 2.0 2.5 3 ...

Page 4

... T = MAX RATED 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev. °C unless otherwise noted - - 100 100 ...

Page 5

... Figure 13. Single Pulse Maximum 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 14. ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev. °C unless otherwise noted - PULSE WIDTH (sec) Power Dissipation SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec) ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D3 6 www.fairchildsemi.com ...

Page 7

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ F-PFS™ Auto-SPM™ FRFET Build it Now™ Global Power Resource CorePLUS™ ...

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