FDD3672_F085 Fairchild Semiconductor, FDD3672_F085 Datasheet - Page 3

• Manufacturer Part Number: FDD3672_F085
• Description: MOSFET 100V NChannel UniFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDD3672_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 44 A
• Resistance Drain-source Rds (on): 24 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 144 W
• Factory Pack Quantity: 2500

FDD3672_F085 Rev. C
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
t
t
t
t
t
t
V
t
Q
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
d(on)
d(off)
f
on
r
off
rr
Symbol
SD
rr
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
J
= 25
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
o
C, L = 0.2mH, I
Parameter
AS
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
= 27A
T
J
= 25
o
C unless otherwise noted
V
V
I
I
I
SD
SD
F
DD
GS
= 44A, dI
certification.
= 44A
= 21A
= 50V, I
= 10V, R
Test Conditions
3
SD
D
GS
= 44A,
/dt = 100A/μs
= 11Ω
Min
-
-
-
-
-
-
-
-
-
-
Typ
0.9
0.8
12
37
24
44
44
58
-
-
www.fairchildsemi.com
1.25
Max
1.0
78
70
57
76
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V
V