FDD3672_F085 Fairchild Semiconductor, FDD3672_F085 Datasheet

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... Low Q Body Diode rr Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant FDD3672_F085 Rev. C Applications DC/DC converters and Off-Line UPS = 44A D Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier ...

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... Q Total Gate Charge at 10V g(TOT) Q Threshold Gate Charge g(TH) Q Gate to Source Gate Charge gs Q Gate Charge Threshold to Plateau gs2 Q Gate to Drain “Miller“ Charge gd FDD3672_F085 Rev 25°C unless otherwise noted C Parameter o < 10V (Note 1) 2 copper Package Reel Size ...

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... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDD3672_F085 Rev ...

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... D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE 0. Figure 3. Normalized Maximum Transient Thermal Impedance 1000 V = 10V GS 100 SINGLE PULSE FDD3672_F085 Rev 125 150 175 Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION( RECTANGULAR PULSE DURATION(s) Figure 4 ...

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... D DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE GS Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD3672_F085 Rev. C 100 ≠ 100us 10 1ms 10ms DC 1 0.001 100 300 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6 ...

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... T , JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 1000 100 f = 1MHz 0 DRAIN TO SOURCE VOLTAGE DS Figure 13. Capacitance vs Drain to Source Voltage FDD3672_F085 Rev 250 μ 1.10 1.05 1.00 0.95 0.90 0.85 80 120 160 200 - Figure 12. Normalized Drain to Source ...