FDMC4435BZ_F126 Fairchild Semiconductor, FDMC4435BZ_F126 Datasheet - Page 4

• Manufacturer Part Number: FDMC4435BZ_F126
• Description: MOSFET -30V P-CH PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC4435BZ_F126

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 8.5 A
• Resistance Drain-source Rds (on): 20 mOhms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 31 W

©2010 Fairchild Semiconductor Corporation
FDMC4435BZ Rev.D2
Typical Characteristics
0.01
20
10
100
0.001
0.1
1
10
10
Figure 7.
1
8
6
4
2
0
0.01
0
Figure 11.
Figure 9.
I
D
= -8.5A
THIS AREA IS
LIMITED BY r
0.01
-V
Switching Capability
Gate Charge Characteristics
DS
t
AV
0.1
, DRAIN TO SOURCE VOLTAGE (V)
Operating Area
10
Unclamped Inductive
, TIME IN AVALANCHE(ms)
T
SINGLE PULSE
T
R
T
J
Q
J
A
T
Forward Bias Safe
= 125
JA
g
= MAX RATED
= 25
DS(on)
, GATE CHARGE(nC)
0.1
= 125
V
o
o
C
DD
C
o
= -10V
C/W
1
V
20
DD
T
T
= -20V
1
J
J
= 25
= 25°C unless otherwise noted
V
o
C
DD
10
30
= -15V
10
10ms
100ms
1s
10s
DC
100us
1ms
100
100
40
4
10000
1000
40
30
20
10
10
10
10
10
10
25
Figure 10.
100
0
10
0.1
-4
-5
-6
-7
-8
0
Figure 8.
Current vs Case Temperature
V
V
GS
DS
Figure 12.
f = 1MHz
V
50
= 0V
= -4.5V
V
GS
R
Limited by Package
GS
5
-V
T
Maximum Continuous Drain
T
-V
to Source Voltage
JC
= 0V
DS
C
= -10V
Capacitance vs Drain
GS ,
,
= 4
, DRAIN TO SOURCE VOLTAGE (V)
Ambient TEMPERATURE (
o
GATE TO SOURCE VOLTAGE(V)
T
C/W
J
10
75
= 125
1
Igss vs Vgss
o
C
15
100
T
J
= 25
20
o
125
o
C )
C
www.fairchildsemi.com
10
25
C
C
C
oss
rss
iss
150
30
30