FDD14AN06LA0_F085 Fairchild Semiconductor, FDD14AN06LA0_F085 Datasheet

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FDD14AN06LA0_F085

Manufacturer Part Number
FDD14AN06LA0_F085
Description
MOSFET 60V N-CHAN PwrTrench
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDD14AN06LA0_F085

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
50 A
Resistance Drain-source Rds (on)
12.8 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-252AA
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Factory Pack Quantity
2500
©2010 Fairchild Semiconductor Corporation
FDD14AN06LA0_F085
N-Channel PowerTrench
60V, 50A, 14.6m
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
Formerly developmental type 83557
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
V
V
I
E
P
T
R
R
MOSFET Maximum Ratings
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 25nC (Typ.), V
STG
RR
= 12.8m (Typ.), V
Body Diode
SOURCE
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
copper pad area
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Maximum Thermal Resistance Junction to Case TO-252
Maximum Thermal Resistance Junction to Ambient TO-252, 1in
GATE
TO-252AA
FDD SERIES
GS
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
amb
C
C
GS
= 5V
< 100
< 80
o
= 5V, I
C
= 25
o
(FLANGE)
C, V
o
DRAIN
o
C, V
C, V
D
®
= 50A
GS
GS
MOSFET
GS
= 5V)
Parameter
= 10V)
= 5V, with R
T
C
= 25°C unless otherwise noted
certification.
JA
= 52
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
o
C/W)
G
2
D
S
-55 to 175
Ratings
Figure 4
0.83
125
9.5
1.2
60
50
50
55
52
20
December 2010
FDD14AN06LA0_F085 Rev. C
Units
W/
o
o
C/W
C/W
mJ
o
W
V
V
A
A
A
A
C
o
C

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FDD14AN06LA0_F085 Summary of contents

Page 1

... Primary Switch for 12V and 24V systems DRAIN T = 25°C unless otherwise noted C Parameter 10V 5V 5V, with C/ certification. December 2010 Ratings Units 9.5 Figure 4 55 125 0.83 W/ -55 to 175 o 1 FDD14AN06LA0_F085 Rev C/W C/W ...

Page 2

... Min Typ Max 150 250 100 0.0102 0.0116 - 0.0128 0.0146 - 0.028 0.033 - 2810 - - 270 - - 115 - 2.7 3.5 = 30V DD = 50A - 9 1.0mA - 7 8 218 - 132 - - 111 - - 1. 1 FDD14AN06LA0_F085 Rev. C Units ...

Page 3

... C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD14AN06LA0_F085 Rev. C 175 ...

Page 4

... STARTING T = 150 C J 0.01 0 TIME IN AVALANCHE (ms) AV Capability V = 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V GS 0.5 1.0 1 DRAIN TO SOURCE VOLTAGE ( 5V 50A 120 160 JUNCTION TEMPERATURE ( C) J FDD14AN06LA0_F085 Rev. C 100 = 2.0 200 ...

Page 5

... OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 30V DD WAVEFORMS IN DESCENDING ORDER 50A 10A GATE CHARGE (nC) g Gate Currents FDD14AN06LA0_F085 Rev. C 200 50 ...

Page 6

... Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD14AN06LA0_F085 Rev 90% ...

Page 7

... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD14AN06LA0_F085 Rev. C ...

Page 8

... S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD14AN06LA0_F085 Rev. C DRAIN 2 SOURCE 3 ...

Page 9

... CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD14AN06LA0_F085 Rev. C DRAIN 2 SOURCE 3 ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDD14AN06LA0_F085 Rev. C ...

Page 11

... TinyBoost™ TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition Rev. I51 FDD14AN06LA0_F085 Rev. C ...

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