FCP600N60Z Fairchild Semiconductor, FCP600N60Z Datasheet - Page 4

• Manufacturer Part Number: FCP600N60Z
• Description: MOSFET 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCP600N60Z

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 4.7 A
• Resistance Drain-source Rds (on): 600 mOhms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 28 ns
• Forward Transconductance Gfs (max / Min): 6.7 S
• Gate Charge Qg: 26 nC
• Minimum Operating Temperature: -55 C
• Power Dissipation: 89 W
• Rise Time: 24 ns
• Typical Turn-off Delay Time: 88 ns

©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current
1.12
1.08
1.04
1.00
0.96
0.92
0.88
0.1
10
50
8
6
4
2
0
1
-80
0.1
25
vs. Case Temperature - FCP600N60Z
-40
vs. Temperature
T
50
T
J
V
C
*Notes:
, Junction Temperature [
DS
, Case Temperature [
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
1
, Drain-Source Voltage [V]
0
C
J
= 150
= 25
75
o
C
o
C
40
10
DS(on)
100
80
o
*Notes:
C]
100
1. V
2. I
100
10
DC
10ms
o
1ms
125
C]
D
120
μ
GS
μ
s
= 10mA
s
= 0V
160
1000
150
(Continued)
4
Figure 12. Eoss vs. Drain to Source Voltage
Figure 8. On-Resistance Variation
Figure 10. Maximum Safe Operating Area
0.01
100
2.5
2.0
1.5
1.0
0.5
0.1
10
1
4
3
2
1
0
-80
0.1
vs. Case Temperature - FCPF600N60Z
0
Switching Capability
vs. Temperature
100
-40
Operation in This Area
is Limited by R
V
T
DS
V
J
*Notes:
, Junction Temperature [
DS
, Drain to Source Voltage [V]
1. T
2. T
3. Single Pulse
1
, Drain-Source Voltage [V]
200
C
J
0
= 150
= 25
o
o
C
DS(on)
C
300
40
10
400
80
*Notes:
100
10
100
10ms
1ms
1. V
2. I
μ
DC
o
μ
www.fairchildsemi.com
s
C]
s
D
120
500
GS
= 3.7A
= 10V
1000
160
600