PSMN7R0-100XS,127 NXP Semiconductors, PSMN7R0-100XS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN7R0-100XS,127
• Description: MOSFET N-CH 100V 6.8 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38.9 A
• Resistance Drain-source Rds (on): 5.4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 57.7 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN7R0-100XS
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
GS(th)
R
(mΩ)
(V)
DSon
16
12
5
4
3
2
1
0
8
4
0
−60
junction temperature
of drain current; typical values
0
V
GS
(V) = 4.6
40
0
80
60
4.8
max
min
typ
120
120
5.0
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
160
All information provided in this document is subject to legal disclaimers.
003aag583
003aad280
T
j
I
(°C)
D
(A)
5.5
6.0
10
200
180
Rev. 3 — 6 March 2012
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.5
1.5
0.5
−1
−2
−3
−4
−5
−6
3
2
1
0
-60
gate-source voltage
factor as a function of junction temperature
0
0
PSMN7R0-100XS
2
min
60
typ
4
120
max
V
© NXP B.V. 2012. All rights reserved.
GS
003aag654
T
j
(V)
( ° C)
03aa35
180
6
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