PSMN7R0-100XS,127 NXP Semiconductors, PSMN7R0-100XS,127 Datasheet - Page 10
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PSMN7R0-100XS,127
Manufacturer Part Number
PSMN7R0-100XS,127
Description
MOSFET N-CH 100V 6.8 MOHMS STD LVL MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN7R0-100XS127.pdf
(15 pages)
Specifications of PSMN7R0-100XS,127
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38.9 A
Resistance Drain-source Rds (on)
5.4 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220F
Minimum Operating Temperature
- 55 C
Power Dissipation
57.7 W
Factory Pack Quantity
50
NXP Semiconductors
PSMN7R0-100XS
Product data sheet
Fig 18. Source current as a function of source-drain voltage; typical values
(A)
I
S
200
160
120
80
40
0
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
0
All information provided in this document is subject to legal disclaimers.
T
j
= 175 ° C
0.4
Rev. 3 — 6 March 2012
0.8
T
j
= 25 ° C
1.2
003aag588
V
SD
(V)
1.6
PSMN7R0-100XS
© NXP B.V. 2012. All rights reserved.
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