PSMN7R0-100XS,127 NXP Semiconductors, PSMN7R0-100XS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN7R0-100XS,127
• Description: MOSFET N-CH 100V 6.8 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38.9 A
• Resistance Drain-source Rds (on): 5.4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 57.7 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN7R0-100XS
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
60
50
40
30
20
10
0
mounting base temperature
Continuous drain current as a function of
Single pulse avalanche rating; avalanche current as a function of avalanche time
0
50
100
(A)
I
AL
10
10
150
2
1
10
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
-3
T
003aag573
mb
( ° C)
200
10
Rev. 3 — 6 March 2012
-2
10
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
(1)
(2)
003aag574
t
AL
(ms)
10
50
PSMN7R0-100XS
100
150
© NXP B.V. 2012. All rights reserved.
T
mb
03aa16
(°C)
200
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