FDB14AN06LA0_F085 Fairchild Semiconductor, FDB14AN06LA0_F085 Datasheet

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FDB14AN06LA0_F085

Manufacturer Part Number
FDB14AN06LA0_F085
Description
MOSFET 60V N-CHAN PwrTrench
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDB14AN06LA0_F085

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
67 A
Resistance Drain-source Rds (on)
12.8 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-263AB
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Factory Pack Quantity
800
©2010 Fairchild Semiconductor Corporation
Formerly developmental type 83557
• RoHS Compliant
FDB14AN06LA0_F085
N-Channel PowerTrench
60V, 60A, 14.6mΩ
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
V
V
I
E
P
T
R
R
MOSFET Maximum Ratings
D
GS
J
DSS
AS
D
θJC
θJA
Symbol
, T
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 24nC (Typ.), V
STG
RR
= 12.8mΩ (Typ.), V
Body Diode
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
copper pad area
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Maximum Thermal Resistance Junction to Case TO-263
Maximum Thermal Resistance Junction to Ambient TO-263, 1in
GS
GATE
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
A
C
C
GS
= 5V
= 25
SOURCE
= 25
= 25
o
= 5V, I
C
o
o
o
C, V
C, V
C, V
FDB SERIES
TO-263AB
D
®
GS
= 60A
GS
GS
MOSFET
= 5V, R
= 10V)
= 5V)
Parameter
T
C
= 25°C unless otherwise noted
θJA
(FLANGE)
DRAIN
= 43
certification.
o
C/W)
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
G
D
S
2
-55 to 175
Ratings
Figure 4
0.83
125
±20
1.2
60
67
60
10
46
43
December 2010
FDB14AN06LA0_F085 Rev. C
Units
W/
o
o
C/W
C/W
mJ
o
W
V
V
A
A
A
A
C
o
C

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FDB14AN06LA0_F085 Summary of contents

Page 1

... FDB SERIES T = 25°C unless otherwise noted C Parameter 10V 5V 5V C/W) GS θJA certification. December 2010 D S Ratings 60 ± Figure 4 46 125 0.83 -55 to 175 1 FDB14AN06LA0_F085 Rev. C Units C/W o C/W ...

Page 2

... 250 ±100 0.0102 0.0116 - 0.0128 0.0146 - 0.028 0.033 - 2900 - - 270 - - 115 - 3.0 3.9 = 30V DD = 60A - 1.0mA - 9 7 276 - 169 - - 109 - - 1. 1 FDB14AN06LA0_F085 Rev. C Units V µ Ω ...

Page 3

... Case Temperature NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDB14AN06LA0_F085 Rev. C 175 ...

Page 4

... AS DSS DD o STARTING STARTING T = 150 C J 0.01 0 TIME IN AVALANCHE (ms) AV Capability 10V GS 0.5 1.0 1.5 2 DRAIN TO SOURCE VOLTAGE ( 5V - 120 JUNCTION TEMPERATURE ( C) J FDB14AN06LA0_F085 Rev. C 100 2.5 = 60A D 160 200 ...

Page 5

... OSS Figure 14. Gate Charge Waveforms for Constant I = 250µ 120 JUNCTION TEMPERATURE ( 30V DD WAVEFORMS IN DESCENDING ORDER 60A 10A GATE CHARGE (nC) g Gate Currents FDB14AN06LA0_F085 Rev. C 160 200 50 ...

Page 6

... Figure 18. Gate Charge Waveforms DUT V GS 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT gs2 Q g(TH OFF t t d(ON) d(OFF 90% 10% 90% 50% 50% PULSE WIDTH FDB14AN06LA0_F085 Rev 90% 10% ...

Page 7

... C/W) θ never exceeded (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 26.51+ 19.84/(0.262+Area) EQ.2 θ 26.51+ 128/(1.69+Area) EQ.3 θJA 1 (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDB14AN06LA0_F085 Rev ...

Page 8

... S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDB14AN06LA0_F085 Rev. C DRAIN 2 SOURCE 3 ...

Page 9

... S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE CIN - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDB14AN06LA0_F085 Rev. C DRAIN 2 SOURCE 3 ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDB14AN06LA0_F085 Rev. C ...

Page 11

... TinyBoost™ TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition Rev. I51 FDB14AN06LA0_F085 Rev. C ...

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