PSMN6R0-25YLB,115 NXP Semiconductors, PSMN6R0-25YLB,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN6R0-25YLB,115
• Description: MOSFET N-CH 25 V 6.1 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R0-25YLB,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Resistance Drain-source Rds (on): 6.1 mOhms at 10 V
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669-4
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 58 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN6R0-25YLB
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
(S)
g
I
D
10
10
10
10
10
10
100
fs
80
60
40
20
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
Min
1
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
40
Typ
Max
2
60
V
All information provided in this document is subject to legal disclaimers.
003aag113
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GS
I
D
(V)
(A)
80
Rev. 2 — 31 October 2011
3
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
GS(th)
(V)
I
D
80
60
40
20
0
3
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
0
1
PSMN6R0-25YLB
T
j
= 150 ° C
I
D
= 5mA
60
2
1mA
T
j
= 25 ° C
120
3
© NXP B.V. 2011. All rights reserved.
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003aag112
V
T
GS
j
( ° C)
(V)
180
4
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