PSMN6R0-25YLB,115 NXP Semiconductors, PSMN6R0-25YLB,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN6R0-25YLB,115
• Description: MOSFET N-CH 25 V 6.1 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R0-25YLB,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Resistance Drain-source Rds (on): 6.1 mOhms at 10 V
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669-4
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 58 W
• Factory Pack Quantity: 1500

NXP Semiconductors
Table 6.
PSMN6R0-25YLB
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
10
Characteristics
4.5
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
3.5
1
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
2
…continued
3
V
GS
All information provided in this document is subject to legal disclaimers.
4
003aag109
(V) = 3.0
V
DS
(V)
2.8
2.6
V
I
see
V
2.4
2.2
Conditions
I
V
dI
see
S
S
GS
GS
GS
Rev. 2 — 31 October 2011
S
= 20 A; V
= 20 A; dI
5
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
GS
S
S
DS
DS
/dt = -100 A/µs;
= 20 A;
= 0 V; T
Fig 7.
= 12 V; f = 1 MHz
= 12 V
R
(m Ω )
DSon
DS
40
30
20
10
j
0
= 12 V;
= 25 °C;
of gate-source voltage; typical values
Drain-source on-state resistance as a function
0
4
PSMN6R0-25YLB
Min
-
-
-
-
-
-
8
Typ
6.6
0.85
27
18
15
12
12
© NXP B.V. 2011. All rights reserved.
003aag110
V
GS
Max
-
1.1
-
-
-
-
(V)
16
Unit
nC
V
ns
nC
ns
ns
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