PSMN6R0-25YLB NXP Semiconductors, PSMN6R0-25YLB Datasheet
PSMN6R0-25YLB
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PSMN6R0-25YLB Summary of contents
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... PSMN6R0-25YLB N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 31 October 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... T pulsed ° j(init) ≤ unclamped sup see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB Graphic symbol G mbb076 Version SOT669 Min Max - kΩ -20 20 Figure 1 ...
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... Fig (A) ( All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB 100 150 Normalized total power dissipation as a function of mounting base temperature 003aag106 (ms) AL 03na19 200 T (°C) mb © ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN6R0-25YLB Product data sheet Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB 003aag107 =10 μ 100 μ 100 (V) DS © ...
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... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN6R0-25YLB Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB Min Typ Max - 2.35 2.57 003aag093 tp P δ ...
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... V; see Figure D DS see Figure MHz °C; see Figure 0.6 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB Min Typ Max 22 1.05 1.42 1. 100 - ...
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... /dt = -100 A/µ see Figure 18 003aag109 V ( Ω ) 2.8 2.6 2.4 2 (V) DS Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB Min Typ - 6 ° DSon Drain-source on-state resistance as a function of gate-source voltage ...
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... I (A) D Fig 9. 003aag113 V GS(th) (V) Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB ° 150 ° Transfer characteristics; drain current as a function of gate-source voltage; typical values ...
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... Product data sheet 003aag115 3.0 3.5 4 (A) D Fig 13. Normalized drain-source on-state resistance Q GD 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB 2 a 4.5V 1.5 1 0 factor as a function of junction temperature 20V (V) 8 ...
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... C rss (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB 150 ° 0.3 0.6 0.9 voltage; typical values 003a a f 444 t b 0.25 I ...
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... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...
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... NXP Semiconductors N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology 8. Revision history Table 7. Revision history Document ID Release date PSMN6R0-25YLB v.2 20111031 • Modifications: Status changed from preliminary to product. • Various changes to content. PSMN6R0-25YLB v.1 20110908 PSMN6R0-25YLB Product data sheet Data sheet status ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 31 October 2011 PSMN6R0-25YLB Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN6R0-25YLB All rights reserved. Date of release: 31 October 2011 ...