PSMN6R0-25YLB,115 NXP Semiconductors, PSMN6R0-25YLB,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN6R0-25YLB,115
• Description: MOSFET N-CH 25 V 6.1 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R0-25YLB,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Resistance Drain-source Rds (on): 6.1 mOhms at 10 V
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669-4
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 58 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN6R0-25YLB
Product data sheet
Fig 4.
(A)
I
10
D
10
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
1
= V
DS
/ I
Rev. 2 — 31 October 2011
D
DC
10
PSMN6R0-25YLB
V
DS
t
10 ms
100 ms
100 μ s
1 ms
(V)
p
=10 μ s
© NXP B.V. 2011. All rights reserved.
003aag107
10
2
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