PSMN6R0-25YLB,115 NXP Semiconductors, PSMN6R0-25YLB,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN6R0-25YLB,115
• Description: MOSFET N-CH 25 V 6.1 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R0-25YLB,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Resistance Drain-source Rds (on): 6.1 mOhms at 10 V
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669-4
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 58 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN6R0-25YLB
Product data sheet
Fig 16. Input, output and reverse transfer capacitances
Fig 18. Reverse recovery timing definition
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
-1
1
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
10
(A)
I
D
0
V
All information provided in this document is subject to legal disclaimers.
003aag118
DS
C
C
C
(V)
iss
oss
rss
10
Rev. 2 — 31 October 2011
2
t
a
Fig 17. Source current as a function of source-drain
t
rr
(A)
I
S
80
60
40
20
t
0
b
voltage; typical values
0
I
RM
003a a f 444
0.25 I
t (s )
R M
0.3
PSMN6R0-25YLB
T
j
= 150 ° C
0.6
0.9
T
© NXP B.V. 2011. All rights reserved.
003aag119
j
= 25 ° C
V
SD
(V)
1.2
10 of 15