SIR878ADP-T1-GE3 Vishay/Siliconix, SIR878ADP-T1-GE3 Datasheet - Page 6

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SIR878ADP-T1-GE3

Manufacturer Part Number
SIR878ADP-T1-GE3
Description
MOSFET 100V 14mOhm@10V 40A N-Ch MV T-FET
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SIR878ADP-T1-GE3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Resistance Drain-source Rds (on)
14 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO-8
Fall Time
8 ns
Forward Transconductance Gfs (max / Min)
44 S
Gate Charge Qg
13.9 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
44.5 W
Rise Time
13 ns
Typical Turn-off Delay Time
25 ns
Part # Aliases
SIR878ADP-GE3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR878ADP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIR878ADP-T1-GE3
Quantity:
70 000
SiR878ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.1
0.01
1
0.0001
0.1
1
10
www.vishay.com/ppg?63369
-4
0.05
0.02
0.1
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
0.02
0.05
0.2
0.1
10
-3
0.001
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
.
10
This document is subject to change without notice.
Single Pulse
-2
Square Wave Pulse Duration (s)
New Product
0.01
Square Wave Pulse Duration (s)
10
-1
1
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
t
2
S11-1999-Rev. B, 10-Oct-11
DM
100
Document Number: 63369
Z
www.vishay.com/doc?91000
thJA
thJA
t
t
1
2
(t)
= 70 °C/W
1000
10

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