SIR878ADP-T1-GE3 Vishay/Siliconix, SIR878ADP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIR878ADP-T1-GE3
• Description: MOSFET 100V 14mOhm@10V 40A N-Ch MV T-FET
• Manufacturer: Vishay/Siliconix

Specifications of SIR878ADP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Resistance Drain-source Rds (on): 14 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 44 S
• Gate Charge Qg: 13.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 44.5 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 25 ns
• Part # Aliases: SIR878ADP-GE3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63369
S11-1999-Rev. B, 10-Oct-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
55
44
33
22
11
0
0
25
Power, Junction-to-Case
T
C
D
50
- Case Temperature (°C)
is based on T
75
J(max)
100
45
36
27
18
9
0
0
This document is subject to change without notice.
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
150
New Product
Current Derating*
T
C
50
- Case Temperature (°C)
75
100
2.5
2.0
1.5
1.0
0.5
0.0
0
125
Power, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
www.vishay.com/doc?91000
SiR878ADP
100
125
www.vishay.com
150
5