SIR878ADP-T1-GE3 Vishay/Siliconix, SIR878ADP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR878ADP-T1-GE3
• Description: MOSFET 100V 14mOhm@10V 40A N-Ch MV T-FET
• Manufacturer: Vishay/Siliconix

Specifications of SIR878ADP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Resistance Drain-source Rds (on): 14 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 44 S
• Gate Charge Qg: 13.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 44.5 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 25 ns
• Part # Aliases: SIR878ADP-GE3

SiR878ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
- 0.2
- 0.4
- 0.6
- 0.8
100
0.1
0.4
0.2
10
1
0
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
T
J
0.2
= 150 °C
V
SD
Threshold Voltage
0
- Source-to-Drain Voltage (V)
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 μA
0.01
75
100
0.1
10
0.8
1
0.01
T
100
Safe Operating Area, Junction-to-Ambient
J
I
I
This document is subject to change without notice.
D
D
* V
T
Single Pulse
= 25 °C
I
A
= 5 mA
Limited
DM
GS
1.0
= 25 °C
Limited by R
Limited
125
> minimum V
V
DS
0.1
- Drain-to-Source Voltage (V)
1.2
150
New Product
DS(on)
GS
*
at which R
1
DS(on)
BVDSS Limited
is specified
10
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
80
40
0
0.001
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
100
1 ms
100 μs
10 ms
2
100 ms
1 s
10 s
DC
0.01
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
4
Time (s)
0.1
S11-1999-Rev. B, 10-Oct-11
Document Number: 63369
6
www.vishay.com/doc?91000
T
J
= 125 °C
1
I
D
8
= 15 A
10
10