SIR878ADP-T1-GE3 Vishay/Siliconix, SIR878ADP-T1-GE3 Datasheet

SIR878ADP-T1-GE3

Manufacturer Part Number

SIR878ADP-T1-GE3

Description

MOSFET 100V 14mOhm@10V 40A N-Ch MV T-FET

Manufacturer

Vishay/Siliconix

Datasheet

1.SIR878ADP-T1-GE3.pdf (13 pages)

Specifications of SIR878ADP-T1-GE3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

40 A

Resistance Drain-source Rds (on)

14 mOhms at 10 V

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

PowerPAK SO-8

Fall Time

8 ns

Forward Transconductance Gfs (max / Min)

44 S

Gate Charge Qg

13.9 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

44.5 W

Rise Time

13 ns

Typical Turn-off Delay Time

25 ns

Part # Aliases

SIR878ADP-GE3

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SIR878ADP-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SIR878ADP-T1-GE3

Quantity:

70 000

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Notes:

a. Based on T

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

Document Number: 63369

S11-1999-Rev. B, 10-Oct-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

Ordering Information: SiR878ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

100

(V)

6.15 mm

= 25 °C.

0.0148 at V

0.018 at V

0.014 at V

PowerPAK

DS(on)

Bottom View

() Max.

= 4.5 V

SO-8

= 10 V

= 7.5 V

= 150 °C)

b, f

N-Channel 100 V (D-S) MOSFET

5.15 mm

(A)

This document is subject to change without notice.

d, e

= 25 °C, unless otherwise noted)

13.9 nC

Steady State

L =0.1 mH

(Typ.)

t  10 s

New Product

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

APPLICATIONS

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• 100 % R

• Compliant to RoHS Directive 2002/95/EC

• DC/DC Primary Side Switch

• Telecom/Server 48 V, Full/Half-Bridge DC/DC

• Industrial

Symbol

Definition

, T

thJC

thJA

stg

and UIS Tested

Power MOSFET

Typical

2.1

- 55 to 150

13.3

10.6

4.5

3.2

Limit

± 20

44.5

28.5

N-Channel MOSFET

100

260

b, c

Maximum

2.8

Vishay Siliconix

www.vishay.com/doc?91000

SiR878ADP

www.vishay.com

°C/W

Unit

°C

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