SIR878ADP-T1-GE3 Vishay/Siliconix, SIR878ADP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIR878ADP-T1-GE3
• Description: MOSFET 100V 14mOhm@10V 40A N-Ch MV T-FET
• Manufacturer: Vishay/Siliconix

Specifications of SIR878ADP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Resistance Drain-source Rds (on): 14 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 44 S
• Gate Charge Qg: 13.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 44.5 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 25 ns
• Part # Aliases: SIR878ADP-GE3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 63369
S11-1999-Rev. B, 10-Oct-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.025
0.021
0.017
0.013
0.009
0.005
On-Resistance vs. Drain Current and Gate Voltage
10
8
6
4
2
0
80
64
48
32
16
0
0
0.0
0
I
D
V
= 10 A
DS
= 25 V
16
6
0.5
Output Characteristics
V
V
GS
DS
Q
V
- Drain-to-Source Voltage (V)
= 4.5 V
g
DS
Gate Charge
- Total Gate Charge (nC)
I
D
= 50 V
- Drain Current (A)
32
12
1.0
V
GS
V
V
GS
= 3 V
48
GS
1.5
18
= 10 V thru 5 V
= 10 V
V
V
GS
DS
V
= 4 V
GS
= 75 V
= 7.5 V
This document is subject to change without notice.
64
2.0
V
24
GS
= 2 V
80
2.5
New Product
30
1800
1440
1080
2.0
1.7
1.4
1.1
0.8
0.5
720
360
10
0
- 50
8
6
4
2
0
0
0
On-Resistance vs. Junction Temperature
C
C
iss
rss
C
I
- 25
D
oss
= 15 A
T
C
20
= 125 °C
Transfer Characteristics
V
1
V
DS
0
GS
T
- Drain-to-Source Voltage (V)
J
T
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
C
Capacitance
= 25 °C
25
40
2
50
V
GS
60
Vishay Siliconix
3
= 10 V
75
www.vishay.com/doc?91000
SiR878ADP
100
80
T
C
4
V
www.vishay.com
= - 55 °C
GS
125
= 4.5 V
100
5
150
3