PSMN1R1-40BS,118 NXP Semiconductors, PSMN1R1-40BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN1R1-40BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R1-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 1.3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN1R1-40BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
D
(A)
I
D
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
10
6.0
0.25
5.2
2
5.0
min
0.5
typ
4
0.75
V
max
GS
V
All information provided in this document is subject to legal disclaimers.
GS
V
003aaf319
(V) = 4.8
DS
(V)
03aa35
(V)
4.7
4.6
4.5
Rev. 2 — 29 February 2012
1
6
N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN1R1-40BS
60
60
max
min
typ
120
120
© NXP B.V. 2012. All rights reserved.
003a a f322
003aad280
T
T
j
j
(°C)
(C)
180
180
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