PSMN1R1-40BS,118 NXP Semiconductors, PSMN1R1-40BS,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN1R1-40BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R1-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 1.3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN1R1-40BS
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
10
350
300
250
200
150
100
10
50
-1
4
3
2
1
0
10
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
Limit R
(1)
100
DS on
= V
DS
/ I
150
D
All information provided in this document is subject to legal disclaimers.
T
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mb
1
(C)
Rev. 2 — 29 February 2012
200
N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK
Fig 2.
P
(%)
DC
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
PSMN1R1-40BS
100
V
DS
(V)
t
100  s
1 ms
10 ms
100 ms
p
150
=10  s
© NXP B.V. 2012. All rights reserved.
T
003a a f328
mb
03aa16
(°C)
10
200
2
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