SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet - Page 9

• Manufacturer Part Number: SIZ902DT-T1-GE3
• Description: MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ902DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.012 Ohms at 10 V, 0.0064 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR-8
• Fall Time: 10 nS, 10 nS
• Gate Charge Qg: 6.8 nC, 21 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 66 W
• Rise Time: 12 nS, 10 nS
• Typical Turn-off Delay Time: 20 nS, 35 nS
• Part # Aliases: SIZ902DT-GE3

CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
T
0.4
J
J
= 150 °C
25
- Temperature (°C)
I
D
= 250 μA
0.6
50
75
T
0.8
1000
J
0.01
100
= 25 °C
0.1
10
100
1
0.1
Safe Operating Area, Junction-to-Ambient
This document is subject to change without notice.
Limited by R
1.0
* V
125
T
A
GS
= 25 °C
> minimum V
150
V
1.2
DS
New Product
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
DS(on)
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
10
50
40
30
20
10
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
100 μs
10 ms
100 ms
1 s
10 s
0.01
1 ms
DC
2
100
V
GS
Single Pulse Power
0.1
- Gate-to-Source Voltage (V)
4
Time (s)
1
6
Vishay Siliconix
10
www.vishay.com/doc?91000
I
T
D
J
= 20 A
T
= 25 °C
J
SiZ902DT
= 125 °C
100
8
www.vishay.com
1000
10
9