SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIZ902DT-T1-GE3
• Description: MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ902DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.012 Ohms at 10 V, 0.0064 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR-8
• Fall Time: 10 nS, 10 nS
• Gate Charge Qg: 6.8 nC, 21 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 66 W
• Rise Time: 12 nS, 10 nS
• Typical Turn-off Delay Time: 20 nS, 35 nS
• Part # Aliases: SIZ902DT-GE3

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
a
J
= 25 °C, unless otherwise noted)
Symbol
t
t
t
t
This document is subject to change without notice.
V
d(on)
d(off)
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
t
t
SD
S
rr
a
b
r
f
r
f
rr
I
I
F
F
New Product
I
I
= 10 A, dI/dt = 100 A/µs, T
I
I
= 10 A, dI/dt = 100 A/µs, T
D
D
D
D
 10 A, V
 10 A, V
 10 A, V
 10 A, V
V
V
V
V
I
I
DD
DD
DD
DD
S
S
= 10 A, V
= 10 A, V
= 15 V, R
= 15 V, R
= 15 V, R
= 15 V, R
T
Channel-1
Channel-2
Channel-1
Channel-2
Channel-1
Channel-2
GEN
GEN
GEN
GEN
Test Conditions
C
= 25 °C
= 4.5 V, R
= 4.5 V, R
= 10 V, R
= 10 V, R
GS
GS
L
L
L
L
= 1.5 
= 1.5 
= 1.5 
= 1.5 
= 0 V
= 0 V
g
g
g
g
J
J
= 1 
= 1 
= 1 
= 1 
= 25 °C
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Vishay Siliconix
www.vishay.com/doc?91000
Typ.
0.85
0.8
15
23
12
20
20
35
10
10
10
22
12
10
20
35
10
10
20
25
10
13
11
12
13
9
SiZ902DT
www.vishay.com
Max.
1.2
1.2
30
50
20
40
40
70
20
20
20
25
20
20
40
70
20
20
16
16
50
80
40
50
20
25
Unit
nC
ns
ns
ns
A
V
3