SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet - Page 11

• Manufacturer Part Number: SIZ902DT-T1-GE3
• Description: MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ902DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.012 Ohms at 10 V, 0.0064 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR-8
• Fall Time: 10 nS, 10 nS
• Gate Charge Qg: 6.8 nC, 21 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 66 W
• Rise Time: 12 nS, 10 nS
• Typical Turn-off Delay Time: 20 nS, 35 nS
• Part # Aliases: SIZ902DT-GE3

CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63465.
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.1
0.1
1
0.0001
0.0001
1
0.02
0.05
Duty Cycle = 0.5
0.1
0.2
0.2
Duty Cycle = 0.5
0.1
Single Pulse
0.02
0.001
0.05
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
This document is subject to change without notice.
0.001
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
New Product
0.1
1
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
DM
100
Vishay Siliconix
Z
thJA
www.vishay.com/doc?91000
thJA
t
t
1
2
(t)
= 57 °C/W
SiZ902DT
www.vishay.com
1000
0.1
11