SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SIZ902DT-T1-GE3
• Description: MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ902DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.012 Ohms at 10 V, 0.0064 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR-8
• Fall Time: 10 nS, 10 nS
• Gate Charge Qg: 6.8 nC, 21 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 66 W
• Rise Time: 12 nS, 10 nS
• Typical Turn-off Delay Time: 20 nS, 35 nS
• Part # Aliases: SIZ902DT-GE3

SiZ902DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
8
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.008
0.007
0.006
0.005
0.004
10
80
60
40
20
8
6
4
2
0
0
0.0
0
0
I
On-Resistance vs. Drain Current
D
= 20 A
V
9
Output Characteristics
V
DS
0.5
20
DS
V
= 15 V
Q
- Drain-to-Source Voltage (V)
GS
g
Gate Charge
V
I
- Total Gate Charge (nC)
D
= 4.5 V
GS
V
- Drain Current (A)
GS
18
= 10 V thru 4 V
= 10 V
V
1.0
40
DS
= 7.5 V
27
V
DS
V
= 24 V
GS
1.5
60
= 3 V
This document is subject to change without notice.
36
2.0
80
45
New Product
3500
3000
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
I
D
C
= 20 A
- 25
rss
0.5
5
V
V
Transfer Characteristics
T
DS
GS
C
0
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
10
Capacitance
25
C
T
C
iss
= 125 °C
1.5
15
50
T
C
= 25 °C
V
S11-2380 Rev. B, 28-Nov-11
75
GS
Document Number: 63465
2.0
20
= 10 V
www.vishay.com/doc?91000
100
T
V
C
GS
2.5
25
= - 55 °C
= 4.5 V
125
150
3.0
30