SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet - Page 10

• Manufacturer Part Number: SIZ902DT-T1-GE3
• Description: MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ902DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.012 Ohms at 10 V, 0.0064 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR-8
• Fall Time: 10 nS, 10 nS
• Gate Charge Qg: 6.8 nC, 21 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 66 W
• Rise Time: 12 nS, 10 nS
• Typical Turn-off Delay Time: 20 nS, 35 nS
• Part # Aliases: SIZ902DT-GE3

SiZ902DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
80
60
40
20
0
0
25
Package Limited
T
Current Derating*
C
50
- Case Temperature (°C)
D
is based on T
75
100
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
This document is subject to change without notice.
125
150
New Product
80
60
40
20
0
25
50
Power, Junction-to-Case
T
C
- Case Temperature (°C)
75
S11-2380 Rev. B, 28-Nov-11
100
Document Number: 63465
www.vishay.com/doc?91000
125
150