PSMN016-100BS,118 NXP Semiconductors, PSMN016-100BS,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN016-100BS,118
• Description: MOSFET N-CH 100V 16 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 4.5 V
• Continuous Drain Current: 57 A
• Resistance Drain-source Rds (on): 28.8 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 148 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN016-100BS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
S
60
45
30
15
0
0
All information provided in this document is subject to legal disclaimers.
0.3
Rev. 2 — 1 March 2012
T
j
= 175 °C
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
0.6
T
0.9
j
= 25 °C
V
001aal322
SD
(V)
1.2
PSMN016-100BS
© NXP B.V. 2012. All rights reserved.
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