PSMN016-100BS,118 NXP Semiconductors, PSMN016-100BS,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN016-100BS,118
• Description: MOSFET N-CH 100V 16 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 4.5 V
• Continuous Drain Current: 57 A
• Resistance Drain-source Rds (on): 28.8 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 148 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN016-100BS
Product data sheet
Fig 1.
Fig 3.
(A)
I
10
D
10
10
(A)
10
I
80
60
40
20
−1
D
1
3
2
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
Limit R
50
DSon
= V
100
DS
/ I
D
150
All information provided in this document is subject to legal disclaimers.
003aag703
T
10
mb
( ° C)
DC
200
Rev. 2 — 1 March 2012
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
2
t
100 μs
1 ms
10 ms
100 ms
p
50
= 10 μs
PSMN016-100BS
100
V
DS
(V)
150
© NXP B.V. 2012. All rights reserved.
T
001aal388
mb
03aa16
(°C)
200
10
3
3 of 14