PSMN016-100BS,118 NXP Semiconductors, PSMN016-100BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN016-100BS,118
• Description: MOSFET N-CH 100V 16 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 4.5 V
• Continuous Drain Current: 57 A
• Resistance Drain-source Rds (on): 28.8 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 148 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN016-100BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
(A)
I
I
10
10
10
10
10
10
D
D
60
45
30
15
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
0.5
10.0
2
min
1
8.0
6.0
typ
4
V
1.5
GS
max
V
All information provided in this document is subject to legal disclaimers.
GS
V
(V) = 4.5
001aal331
DS
(V)
03aa35
(V)
5.5
5.2
5.0
2
6
Rev. 2 — 1 March 2012
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
3.2
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN016-100BS
60
60
max
min
typ
120
120
© NXP B.V. 2012. All rights reserved.
003aad774
003aad280
T
T
j
j
(°C)
(°C)
180
180
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