PSMN016-100YS_11 PHILIPS [NXP Semiconductors], PSMN016-100YS_11 Datasheet
PSMN016-100YS_11
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PSMN016-100YS_11 Summary of contents
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... PSMN016-100YS N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Rev. 4 — 27 September 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... V GS avalanche energy unclamped; R Simplified outline SOT669 (LFPAK; Power-SO8) Description plastic single-ended surface-mounted package; 4 leads All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS Min = see Figure 14 °C; - j(init) ≤ ...
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... V; unclamped sup 003aad880 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS Min - = 20 kΩ -20 Figure 1 - Figure 1 - Figure -55 - Ω ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN016-100YS Product data sheet N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK DC 10 All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS 003aad881 = 10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN016-100YS Product data sheet N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS Min Typ Max - 0.54 1.28 003aad882 t p δ ...
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... MHz °C; see Figure 1.7 Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS Min Typ Max = -55 ° °C 100 - - 4.7 ...
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... (V) GS Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS Min Typ Max - 0.8 1 131 - 003aad885 ...
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... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 ...
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... I (A) D Fig 14. Gate charge waveform definitions 003aad892 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK ( 175 ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS 003aad894 = 25 °C 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...
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... N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS Supersedes PSMN016-100YS v.3 PSMN016-100YS v.2 © NXP B.V. 2011. All rights reserved ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 September 2011 PSMN016-100YS Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 27 September 2011 Document identifier: PSMN016-100YS ...