PSMN016-100YS_10 NXP [NXP Semiconductors], PSMN016-100YS_10 Datasheet
PSMN016-100YS_10
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PSMN016-100YS_10 Summary of contents
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... PSMN016-100YS N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Rev. 03 — 30 March 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... G gate mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name PSMN016-100YS LFPAK PSMN016-100YS_3 Product data sheet N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Quick reference …continued Conditions drain-source on-state resistance T = 100 °C; see ...
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... j(init Ω unclamped 003aad880 120 P der (%) 80 40 150 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS Min - - - Figure -55 - ≤ 100 V; - sup 100 150 Normalized total power dissipation as a function of mounting base temperature © ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN016-100YS_3 Product data sheet N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK DC 10 All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS 003aad881 = 100 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN016-100YS_3 Product data sheet N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS Min Typ Max - 0.54 1.28 003aad882 δ ...
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... MHz see Figure 16 = 1.7 Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS Min Typ 90 - 100 - 1 - Figure Figure 0. ...
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... V (V) GS Fig 6. 003aad888 ( (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS Min Typ Figure 131 Forward transconductance as a function of drain current; typical values 4.7 ...
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... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 ...
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... I (A) D Fig 14. Gate charge waveform definitions 003aad892 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK ( 175 ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS 003aad894 = 25 °C 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...
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... N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Data sheet status Change notice Product data sheet - Objective data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS Supersedes PSMN016-100YS_2 PSMN016-100YS_1 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 PSMN016-100YS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 30 March 2010 Document identifier: PSMN016-100YS_3 ...