FDMS86152 Fairchild Semiconductor, FDMS86152 Datasheet - Page 6
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FDMS86152
Manufacturer Part Number
FDMS86152
Description
MOSFET 100V N-Channel Power Trench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS86152.pdf
(7 pages)
Specifications of FDMS86152
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
45 A
Resistance Drain-source Rds (on)
6 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Fall Time
5 ns
Forward Transconductance Gfs (max / Min)
42 S
Gate Charge Qg
36 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
6 ns
Typical Turn-off Delay Time
25 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86152
Manufacturer:
ON/安森美
Quantity:
20 000
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
Dimensional Outline and Pad Layout
INDICATOR
IDICATOR
0.42 (8X)
PIN #1
PIN #1
PKG
0.65
0.55
(0.38)
0.10 C
0.08 C
L C
0.80
0.70
1
1
8
8
BOTTOM VIEW
SIDE VIEW
TOP VIEW
PKG
5.10
4.90
3.91
3.66
3.81
0.25
0.15
C L
DETAIL A
SCALE: 2:1
1.27
4
5
4
5
0.05
0.00
(0.35)
A
(1.69)
0.10
6.25
5.90
B
4.66
4.46
SEE
DETAIL A
PLANE
SEATING
C
C A B
4.79
6
1.14
3.65
1.27
1.27
NOTES: UNLESS OTHERWISE SPECIFIED
RECOMMENDATION
A) PACKAGE STANDARD REFERENCE:
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
D) DIMENSIONING AND TOLERANCIN G PER
E) IT IS RECOMMENDED TO HAVE NO TRACES
F) DRAWING FILE NAME: PQFN08JREV1.
8
1
LAND PATTERN
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
ASME Y14.5M-1994.
OR VIAS WITHIN THE KEEP OUT AREA.
JEDEC MO-240, ISSUE A, VAR. AA,
7
2
4.42
5.10
3.81
3.81
6
3
5
4
6.61
0.61
KEEP OUT AREA
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