FDMS86200DC Fairchild Semiconductor, FDMS86200DC Datasheet - Page 6
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FDMS86200DC
Manufacturer Part Number
FDMS86200DC
Description
MOSFET 150V/20V N Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS86200DC.pdf
(8 pages)
Specifications of FDMS86200DC
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
28 A
Resistance Drain-source Rds (on)
17 mOhms, 25 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56-8
Fall Time
5 ns
Forward Transconductance Gfs (max / Min)
32 S
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
4 ns
Typical Turn-off Delay Time
23 ns
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©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. C1
Typical Characteristics
0.001
0.01
0.1
2
1
10
-3
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-2
SINGLE PULSE
R
θ
T
JA
J
= 81
= 25 °C unless otherwise noted
o
C/W
10
t, RECTANGULAR PULSE DURATION (sec)
-1
6
1
10
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
θJA
DM
100
1
/t
x R
2
θJA
t
1
+ T
t
2
A
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